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| Transistors 2SB0709A (2SB709A) Silicon PNP epitaxial planar type For general amplification Complementary to 2SD0601A (2SD601A) Features * High forward current transfer ratio hFE * Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. Unit: mm 0.40+0.10 -0.05 3 1.50+0.25 -0.05 2.8+0.2 -0.3 0.16+0.10 -0.06 1 2 (0.65) (0.95) (0.95) 1.90.1 2.90+0.20 -0.05 10 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -45 -45 -7 -100 -200 200 150 -55 to +150 Unit V V V mA mA mW C C 1.1+0.2 -0.1 1.1+0.3 -0.1 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: B Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC = -10 A, IE = 0 IC = -2 mA, IB = 0 IE = -10 A, IC = 0 VCB = -20 V, IE = 0 VCE = -10 V, IB = 0 VCE = -10 V, IC = -2 mA IC = -100 mA, IB = -10 mA VCB = -10 V, IE = 1 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz 160 - 0.3 80 2.7 Min -45 -45 -7 - 0.1 -100 460 - 0.5 Typ Max Unit V V V A A V MHz pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Marking symbol Q 160 to 260 BQ R 210 to 340 BR S 290 to 460 BS No-rank 160 to 460 B Product of no-rank is not classified and have no marking symbol for rank. Note) The part number in the parenthesis shows conventional part number. Publication date: March 2003 SJD00047BED 0 to 0.1 0.40.2 5 1 2SB0709A PC Ta 240 -120 IC VCE Ta = 25C IC I B -60 VCE = -5 V Ta = 25C Collector power dissipation PC (mW) 200 -100 -50 Collector current IC (mA) 160 -80 IB = -300 A -60 -250 A -200 A -40 -150 A -100 A -50 A Collector current IC (mA) -40 120 -30 80 -20 40 -20 -10 0 0 0 40 80 120 160 0 -2 -4 -6 -8 -10 -12 0 0 -100 -200 -300 -400 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Base current IB (A) IB VBE -400 -350 -300 -250 -200 VCE = -5 V Ta = 25C -240 IC VBE VCE = -5 V 25C Ta = 75C -25C VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) -10 IC / IB = 10 -200 Collector current IC (mA) -1 Ta = 75C 25C -25C Base current IB (A) -160 -120 - 0.1 -150 -100 -50 0 - 0.4 - 0.8 -1.2 -1.6 -80 - 0.01 -40 0 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 - 0.001 -1 -10 -100 -1 000 Base-emitter voltage VBE (V) Base-emitter voltage VBE (V) Collector current IC (mA) hFE IC 600 VCE = -10 V 160 140 VCB = -10 V Ta = 25C fT I E Collector output capacitance C (pF) (Common base, input open circuited) ob 8 7 6 5 4 3 2 1 0 -1 Cob VCB IE = 0 f = 1 MHz Ta = 25C Forward current transfer ratio hFE Transition frequency fT (MHz) 500 120 100 80 60 40 20 0 0.1 400 Ta = 75C 25C -25C 300 200 100 0 -1 -10 -100 -1 000 1 10 100 -10 -100 Collector current IC (mA) Emitter current IE (mA) Collector-base voltage VCB (V) 2 SJC00047BED 2SB0709A NF IE 6 20 NF IE VCB = -5 V f = 1 kHz Rg = 2 k Ta = 25C VCB = -5 V R = 50 k 18 g Ta = 25C 16 h Parameter IE VCE = -5 V f = 270 Hz Ta = 25C 5 hfe 100 Noise figure NF (dB) Noise figure NF (dB) 4 14 12 10 8 6 4 2 10 kHz h Parameter f = 100 Hz 1 kHz hoe (S) 3 10 2 hie (k) 1 0 0.01 0.1 1 10 0 0.1 1 10 1 0.1 hre (x 10-4) 1 10 Emitter current IE (mA) Emitter current IE (mA) Emitter current IE (mA) h Parameter VCE IE = 2 mA f = 270 Hz Ta = 25C hfe 100 h Parameter hoe (S) 10 hre (x 10-4) hie (k) 1 -1 -10 -100 Collector-emitter voltage VCE (V) SJC00047BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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